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inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor BU2725DX description high switching speed high voltage built-in ddamper ddiode applications designed for use in horizontal def lection circuits of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1700 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 12 a i cm collector current-peak 30 a i b base current- continuous 12 a i bm base current-peak 20 a p c collector power dissipation @ t c =25 45 w t j junction temperature 150 t stg storage temperature range -65~150 symbol parameter max unit r th j-c thermal resistance,junction to case 2.8 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BU2725DX electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 600ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 7a; i b = 1.75a 1.0 v v be (sat) base-emitter saturation voltage i c = 7a; i b = 1.75a 0.95 v i ces collector cutoff current v ce = 1700v; v be = 0 v ce = 1700v; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v ; i c = 0 110 ma h fe-1 dc current gain i c = 1a; v ce = 5v 19 h fe-2 dc current gain i c = 7a; v ce = 1v 3.8 7.8 v ecf c-e diode forward voltage i f = 7a 2.2 v

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